inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistors bus133/a description high switching speed collector-emitter sustaining voltage- : v ceo(sus) = 450v (min)-bus133 500v (min)-BUS133A applications designed for use in very fast switching applications in inductive circuits. absolute maximum ratings(t a =25 ) symbol parameter max unit v ces collector- emitter voltage(v be = 0) bus133 850 v BUS133A 1000 v ceo collector-emitter v oltage bus133 450 v BUS133A 500 v ebo emitter-base voltage 9 v i c collector current-continuous 15 a i cm collector current-peak 20 a i b base current 10 a i bm base current-peak 15 a p c collector power dissipation @t c =25 175 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.0 /w
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistors bus133/a electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage bus133 i c = 0.1a ; i b = 0; l= 10mh 450 v BUS133A 500 v ce(sat)-1 collector-emitter saturation voltage bus133 i c = 5a; i b = 0.7a 2.5 v BUS133A i c = 5a; i b = 1a 1.0 v ce(sat)-2 collector-emitter saturation voltage bus133 i c = 10a; i b = 1.3a 3.0 v BUS133A i c = 10a; i b = 2a 1.5 v be(sat) base-emitter saturation voltage bus133 i c = 10a; i b = 1.3a 1.5 v BUS133A i c = 10a; i b = 2a 1.5 i cev collector cutoff current v ce =v cesmmax ;v be =-1.5v v ce =v cesmmax ;v be =-1.5v;t j =100 0.25 1.5 ma i ebo emitter cutoff current v eb = 6v; i c = 0 1 ma h fe dc current gain i c = 15a ; v ce = 5v 5 c ob output capacitance i e = 0 ; v cb = 10v; f test = 1khz 400 pf switching times , resistive load t on turn-on time bus133 i c = 10a ;i b1 = 1.3a; i b2 = -2.6a 0.4 s BUS133A 0.45 t stg storage time 1.3 s t f fall time 0.15 s
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